SN74CBT3305CPWR_TI(德州仪器)中文资料_英文资料_价格_PDF手册

SN74CBT3305CPWR

具有 –2V 下冲保护的 5V、1:1 (SPST)、2 通道 FET 总线开关（高电平有效）

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FEATURES

• Undershoot Protection for OFF Isolation on A and B Ports up to –2 V

• Bidirectional Data Flow With Near-Zero Propagation Delay

• Low ON-State Resistance (r on) Characteristics (ron = 3 Ω Typ)

• Low Input/Output Capacitance Minimizes Loading and Signal Distortion(Cio(OFF) = 5 pF Typ)

• Data and Control Inputs Provide Undershoot Clamp Diodes

• Low Power Consumption(ICC = 3 µA Max)

• VCC Operating Range From 4 V to 5.5 V

• Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs

• I off Supports Partial-Power-Down Mode Operation

• Latch-Up Performance Exceeds 100 mA Per JESD 78, ClassII

• ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model(A114-B, Class II)

1000-V Charged-Device Model (C101)

• Supports Both Digital and Analog Applications: USB Interface, Bus Isolation,Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION

The SN74CBT3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r on), allowing for minimal propagation delay. Active undershoot-protection circuitry on the A and B ports of the device provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is conncected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

DESCRIPTION/ORDERING INFORMATION (CONTINUED)

This device is fully specified for partial-power-down application using I off . The I off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.