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SN74LVC1G3208DBVR_TI(德州仪器)中文资料_英文资料_价格_PDF手册

2024/6/25 11:51:19

186

SN74LVC1G3208DBVR

单路 3 输入正或与门

 

 

    

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FEATURES

 

• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages

• Supports 5-V VCC Operation

• Inputs Accept Voltages to 5.5 V

• Provides Down Translation to VCC

• Max tpd of 5 ns at 3.3 V

• Low Power Consumption, 10-µA Max ICC

• ±24-mA Output Drive at 3.3 V

• Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typ @ 3.3 V)

• Can Be Used in Three Combinations:

– OR-AND Gate

– OR Gate

– AND Gate

• Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection

• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

• ESD Protection Exceeds JESD 22

– 2000-V Human-Body Model (A114-A)

– 200-V Machine Model (A115-A)

– 1000-V Charged-Device Model (C101)

 

                        

 

DESCRIPTION

 

This device is designed for 1.65-V to 5.5-V VCC operation.

 

The SN74LVC1G3208 device is a single 3-input positive OR-AND gate. It performs the Boolean function Y = (A B) ● C in positive logic.

 

By tying one input to GND or VCC, the SN74LVC1G3208 device offers two more functions.When C is tied to VCC, this device performs as a 2-input OR gate (Y = A B). When A is tied to GND, the device works as a 2-input AND gate (Y = B ● C).This device also works as a 2-input AND gate when B is tied to GND (Y = A ● C).

 

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

 

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.